![]() In this paper, rectifier characteristics of bare-dihydrogenated junctions of GNR and SiNR structures are investigated and compared utilizing first-principles approach. On the other hand, rectifiers together with their static and dynamic behaviours constitute the basics of the electronics technology. In this context, GNRs and SiNRs provide advantages such as low area consumption and the adjustment of their electronic behaviours by edge states and widths. Investigation and comparison of bare-dihydrogenated junction rectifiers of graphene and silicene nanoribbons Investigation and comparison of bare-dihydrogenated junction rectifiers of graphene and silicene.Īlthough silicon and similar bulk materials are widely used in today’s integrated circuits, the transition to lower dimensional structures such as two-dimensional graphene, one-dimensional graphene nanoribbons (GNRs) and silicene nanoribbons (SiNRs) seems inescapable due to the increment of inelastic scattering and related performance degrading effects in bulk circuit components. ![]()
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